| Home | Terms of Use | Site Map | Contact Us |
IndustryCommunity.com > Manufacturing Community > Forum of High Vacuum Technology/Processing/Coating > Message
Main Menu
Find

[ List Subjects ][ Post Message ]
[ View Followups ][ Post Followup ]

Subject: oxygen in a-SiC

Date: 04/10/03 at 7:58 AM
Posted by: Andrey Vasin
E-mail: av966@yahoo.com
Message Posted:

Hi colleges
Can anybody to help me with following problem. Currently we are working with deposition of amorphous silicon carbide films (a-SiC:H) by dc-magnetron sputtering of the silicon in Ar+CH4 atmosphere. We developed the deposition conditions for stochiometric SiC. But the main problem is oxygen. Applying absolutely equal deposition conditions (base pressure (10-5torr), working pressure (10-2torr), target-substrate distance, discharge power, substrate temperature, target training time etc.) we have different oxygen contamination from time to time. From less then 3at.% to more then 10at.%. Have anybody the experience with such kind of problem? What the origin of the oxygen contamination: resudual water vapor, residual oxygen or carbon monooxyde (CO) desorption? What are the best possible solutions: increase base pressure, increase working gas flow rate, heating the chamber walls or something else?

Thank you in advance
Andrey


Follow Ups:


Post a Follow-up:

Name:
E-Mail:
Subject:

Message to Post:

 

Click here:
1999-2001 Sunlit Technology Co., Ltd. All rights reserved.