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Subject: oxygen in a-SiC
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Date: 04/10/03 at 7:58 AM
Posted by: Andrey Vasin
Can anybody to help me with following problem. Currently we are working with deposition of amorphous silicon carbide films (a-SiC:H) by dc-magnetron sputtering of the silicon in Ar+CH4 atmosphere. We developed the deposition conditions for stochiometric SiC. But the main problem is oxygen. Applying absolutely equal deposition conditions (base pressure (10-5torr), working pressure (10-2torr), target-substrate distance, discharge power, substrate temperature, target training time etc.) we have different oxygen contamination from time to time. From less then 3at.% to more then 10at.%. Have anybody the experience with such kind of problem? What the origin of the oxygen contamination: resudual water vapor, residual oxygen or carbon monooxyde (CO) desorption? What are the best possible solutions: increase base pressure, increase working gas flow rate, heating the chamber walls or something else?
Thank you in advance
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