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Subject: dc sputtering
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Date: 04/09/03 at 10:54 AM
Posted by: Sarfaraz Moh
In Reply to: dc sputtering posted by Abhiram Govindaraju on 04/07/03 at 6:16 PM:
Hello Abhiram Govindaraju
1) The parameters depend on the type/make of the deposition system for Al you can usually work at about 3/4 of the full power. The chamber pressure can be around 3-5 millitorr so accordingly you can control the flow of the Ar gas to reach this value.
2) The Ar gas has the bset value of sputtering yield as compared to all other gases in case of sputtering Al. Hence you cannot expect the same rise in the depostion rate as compared to Ar when introducing any other inert gas.
Beyond a certain flow rate the deposition rate decreses as there will be scattering of the atoms/ions as there will be more atoms, at this moment the voltage will decrease if the process is current controlled and vice-versa.
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