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Subject: dc sputtering
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Date: 04/07/03 at 6:16 PM
Posted by: Abhiram Govindaraju
hi all,i have a question regarding dc sputtering(not the magnetron based sputtering). could one of you answer the following questions,
1.what is the voltage, current,and gas pressure reqired for a normal dc sputtering with argon gas as the inert gas to generate plasma and aluminium as the target material.
2.the sputtering machine that we have is a cvc 601 sputter chamber,my question is, what happens if i pump a different inert gas say neon /krypton or xenon along with argon into the chamber using the other gas inlet?what happens to the deposition rate and how does the voltage and current effect because of this.first of all can this be done.
i have learnt that an inert gas argon is good for dc sputtering and this gas when ionized gives out positive ions which move toward the cathode and knock out the atoms from the surface of the target.so if i increase the number of gas atoms that can be ionized by sending a different inert gas and ionizing that gas also,so by producing more positive ions so that they knock out more atoms from the surface.
could one of you let me know what would happen in the above mentioned case.sputtering can be improved by increasing the gas flow rate but can that pressure be increased with an alternative gas?
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