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Subject: Re: plasma assisted evaporation
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Date: 09/10/02 at 3:28 PM
Posted by: Vladimir Tchoutko
In Reply to: plasma assisted evaporation posted by YC Zhang on 09/10/02 at 5:50 AM:
I just would like to add a little bit to previous replies. To obtain a really good result the pressure must be no more than about 5x10-4 torr. Othervise there may be discharges in e-gun and. moreover, when the pressure is close to (6 - 7)x10-4 torr the evaporated particles free path length may be less than the distance between your substrates and e-beam gun. And your deposition rate decreases to practically zero. If you can support a good discharge in the range (0.8 - 2)x10-4 torr everything should be OK. And the second: if you deposit oxides better use Ar + O2 mix or pure O2. There is a greate space for efforts, mistakes and victories!
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