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Subject: Re: plasma assisted evaporation

Date: 09/10/02 at 12:50 PM
Posted by: Rob Belan
E-mail: rbelan@angstromsciences.com
Message Posted:

In Reply to: plasma assisted evaporation posted by YC Zhang on 09/10/02 at 5:50 AM:

The plasma on the substrate can be used during film growth however there are several problems in doing this though. One is that typicaly there is no Argon in the chamber when you do the ebeam evaporation. So now you have argon inclusions that will be present in the growing film. Two is that your deposition rate will change because you are etching away the deposited film as it grows and you are making it slightly more difficult for the evaporated material to get to the substrate with the argon partial pressure. Finally there is a chance that the RF can "leak" in this configuration and give your deposition monitoring equipment false readings. The only way to tell if any of these factors are detrimental to your process is to try it and analyze the results. Best of Luck!

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