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Subject: Seeking an R&D Engineer job in US

Date: 10/09/03 at 7:16 PM
Posted by: Yongwei Song
E-mail: song_mail[AT55]yahoo.com (replace [AT55] with @ to reply)
Message Posted:

Name: Yongwei Song
E-mail: song_mail@yahoo.com
Tel:(347)232-1158
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Objective To obtain an R&D or Process Engineer position in industry
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Qualifications

U.S. Work Authorization
Strong problem solving and troubleshooting skills
Strong analytic and data analysis skills
Strong computer literacy skills
Ability to work in a team or independently
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Education
Ph.D. in Material Science, City University of New York, October 2001
Thesis Title: “Studies of Thermal Oxidation of Single Crystal 4H- and 6H-Silicon Carbide”

B.S. Degree in Low Temperature Physics, University of Science and Technology of China, Hefei,China, June 1992
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Special Trainning
American Vacuum Society (AVS) short courses, Nashville, May 20-23, 2002:
1. Sputter deposition
2. Atomic Force and Scanning Tunneling Microscopy
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Skill

• Routine experience in operation and maintenance of various high vacuum system, residual gas analysis (RGA) and He leak detector.
• Experience in radio-frequency and microwave plasma enhanced CVD deposition system
• Experience in electron-beam evaporation system
• Comprehensive knowledge of optical film deposition and characterization analysis
• Experience in gas flow control system
• Comprehensive knowledge of optical measurement: FTIR, UV-Visible spectrophotometer and ellipsometer, Raman spectroscopy.
• Experience in Surface Analyses – X-ray Photoelectron Spectroscopy (XPS), Rutherford Backscattering Spectrometry(RBS), Particle-Induced X-ray Emission Spectrometry(PIXE),
Scanning Electron Microscopy (SEM), X-ray diffractometer, Atom Force Microscopy(AFM),
Secondary Ion Mass Spectrometry(SMIS)
• Experience in Electrical Analyses: Resistance, Capacitance
• Experience in Helium4 Cryostat and Helium3 Cryostat.
• Routine operation and maintenance experience for 2.0MeV Van de Graaff Electrostatic Accelerator.
• Operation experience for 400KeV Medium-Energy Ion Scattering (MEIS).
• Real-time Data acquisition and measurement system
• Knowledge of Pulsed Laser Deposition (PLD) and MOCVD.
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Computer Skill

• Hardware: familiar with IBM PC and its network connection, D/A, A/D converter, GPIB interface and instrument control via GPIB, R232 serial interface and ISA, PCI interface.
• Operating System: familiar with MSDOS, Win95, 98, 2000, XP/NT, UNIX, Linux.
• Program Language: fluent for 8086 Assemble Language, C/C++, Visual FoxPro 3.0, Java, Javascript, HTML/DHTML, Active Server Page (ASP), FORTRAN, Labview,
• Software: MaxPlus II, Microcal Origin, KaleidaGraph, Microsoft Office, Matlab.
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Research Experience

8/2002 – 12/2002 Rutgers, The State University of New Jersey, NJ
Visiting Scientist at Laboratory for Surface Modification

Investigate SiC/SiO2 interface properties using Medium Energy Ion Scattering.

2/2002- now Vanderbilt University, Nashville, TN
Research Associate with Professor Leonard C. Feldman

Development of Process Technologies for High-Performance MOS-based SiC Power Switching Devices (Optimization of the Dielectric/SiC Interface)

Investigate oxide growth in oxygen on the Si-face, C-face and a-face 4H-SiC.
Study post-oxidation annealing in H2, NO and N3H, study Dit using C-V analysis.
Study the SiC/SiO2 interface properties using ion scattering, such as RBS and NRA.

Study of Magnetic Semiconductors GaMnAs, MnGe using Particle-Induced X-ray Emission Spectrometry(PIXE)

3/97-12/2001 City College of New York, CUNY, New York
Research Assistant with Professor F. W. Smith.

Thermal Oxidation of Single Crystal Silicon Carbide (SiC)
Study the thermal oxidation of single crystal SiC at high temperatures.
Grow thin insulated film (SiO2) on the surface of SiC semiconductor.
The phase diagram of oxidation of SiC is obtained theoretically and experimentally.
First group to observe the difference of the critical oxidation conditions for the Si- and C-terminated faces of SiC at the same time.
Study the emissivity properties of heavy N-depoed 4H and 6H-SiC.

Growth of Diamond, DLC and Boron Nitride Optical Thin Film by CVD Method
Microwave PECVD method to deposit crystalline diamond, amorphous “diamond-like” carbon films.
Radio-frequency PECVD method to deposit Boron Nitride films (precursor: borazine B3N3H6) with high optical transparency, high electrical resistivity, high thermal conductivity and high hardness.
Developed an in situ measurement to determine surface roughness and thickness of the growing optical films.
Optimize the film growth condition.

8/92-8/95 Cryogenic Laboratory, Chinese Academy of Sciences, Beijing, China
Research Assistant

High-Tc Superconductors
Study the specific heat and magnetic susceptibility property of YPrBaCuO.
Kondo interaction between Pr ion magnetic moment and mobile hole is found in this system.
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Membership

Material Research Society (MRS)
American Physical Society (APS)
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Publications and Conference: Available upon request
References: Available upon request


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